Source/Drain Junction Partition in MOS Snapback Modeling for ESD Simulation
Snapback behavior determines ESD protection effectiveness - SemiWiki
Explain the snapback phenomenon in NMOS devices - Siliconvlsi
Are Nexperia Power MOSFETs ESD Protected? - YouTube
Snapback avoidance design flow for a memory technology - ppt video online download
MOSFET snapback sustaining and breakover voltage as a function of... | Download Scientific Diagram
Impact from IC On-Chip Protection Design on EOS - In Compliance Magazine
Snapback‐free reverse conducting IGBT with p‐poly trench‐collectors - Huang - 2020 - Electronics Letters - Wiley Online Library
Technical considerations and protection mechanism for ESD event...
parasitic BJT(기생 BJT; snapback, latch up) : 네이버 블로그
Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
Electronics | Free Full-Text | Layout Strengthening the ESD Performance for High-Voltage N-Channel Lateral Diffused MOSFETs
GGNMOS ESD Protection Simulation
Figure 1 from Modeling MOS snapback for circuit-level ESD simulation using BSIM3 and VBIC models | Semantic Scholar
Snapback curves of a NMOS w/ a gate resistor (lines: simulation,... | Download Scientific Diagram
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
ESD Device Modeling: Part 1 - In Compliance Magazine
Figure 1 from A Study of Snapback and Parasitic Bipolar Action for ESD NMOS Modeling | Semantic Scholar
ggNMOS (grounded-gated NMOS) – SOFICS – Solutions for ICs
ggNMOS (grounded-gated NMOS)
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
